PREPARATION OF (100)-ORIENTED METALLIC LANIO3 THIN-FILMS ON SI SUBSTRATES BY RADIO-FREQUENCY MAGNETRON SPUTTERING FOR THE GROWTH OF TEXTURED PB(ZR0.53TI0.47)O-3

Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As‐deposited LNO films are metallic; those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol‐gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin film on the LNO‐coated substrate was also found to have a significant (100)‐ and (001)‐oriented texture. The ferroelectric capacitor fabricated from these films displays a good P–E hysteresis characteristic. © 1995, American Institute of Physics. All rights reserved.