ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT

被引：37

作者：

FURUKAWA, S

KAGAWA, T

MATSUMOTO, N

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(82)90306-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：927 / 930

页数：4

共 8 条

[1] EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES
ASHOK, S
LESTER, A
FONASH, SJ
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 200 - 202
[2] DENBOER W, 1981, J PHYS C S10, V42
[3] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
GOODMAN, NB
FRITZSCHE, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
[4] HVAM JM, 1981, J PHYS C S10, V42
[5] KAGAWA T, 1981, 13TH P C SOL STAT DE
[6] LAMPERT MA, 1970, CURRENT INJECTION SO, P76
[7] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE
TIEDJE, T
CEBULKA, JM
MOREL, DL
ABELES, B
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1425 - 1428
[8] YAMASAKI S, 1981, J PHYS C S10, V42