INVESTIGATION OF GROWTH KINETICS AND MECHANISM OF GAAS AND (INGA)AS THIN-FILMS GROWN BY A STEP-COOLING TECHNIQUE OF LIQUID-PHASE EPITAXY

被引：4

作者：

BOLKHOVITYANOV, YB ^{[1
]}

ZEMBATOV, HB ^{[1
]}

机构：

[1] NOVOSIBIRSK SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

关键词：

D O I：

10.1016/0022-0248(77)90069-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：101 / 106

页数：6

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[3]

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[4]

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[5]

BOLKHOVITYANOV YB, 1975, PROCESSI ROSTA SINTE, P285

[6]

BOLTAKS BI, 1972, DIFFUSIA TOCHECHNIE

[7] SOME THERMODYNAMIC ASPECTS OF GROWTH OF STRAINED CRYSTALS [J].

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SMALL, MB .

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[10]

ENSTROM RE, 1971, GALLIUM ARSENIDE REL, P30