ELECTRICAL-PROPERTIES OF BASNO3 IN SUBSTITUTION OF ANTIMONY FOR TIN AND LANTHANUM FOR BARIUM

被引：33

作者：

HUANG, TK

NAKAMURA, T

ITOH, M

INAGUMA, Y

ISHIYAMA, O

机构：

[1] Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, 227, 4259 Nagatsuta, Midori-ku

来源：

JOURNAL OF MATERIALS SCIENCE | 1995年 / 30卷 / 06期

关键词：

D O I：

10.1007/BF00375264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline materials of BaSn1-xSbxO3-delta and Ba1-yLaySnO3-delta were prepared. Substitutional solubilities of antimony for tin and lanthanum for barium, respectively, in BaSnO3 were obtained to be x=0.18 for BaSn1-xSbxO3-delta and y < 0.052 for Ba1-yLaySnO3-delta. The X-ray photoemission spectroscopy measurements showed the valence of antimony and tin is mixed in our samples of BaSn1-xSbxO3-delta. At lower temperature, magnetic susceptibilities of BaSn1-xSbxO3-delta and Ba1-yLaySnO3-delta satisfy the Curie law, indicating the existence of non-interacting localized electrons at the Sn4+ site, and forming a Sn4+ +e(-) state in these systems. By substitution of antimony and lanthanum in BaSnO3, the conductive properties are semiconductor-like. To explain this conductive behaviour, three types of mechanism were taken into consideration.

引用

页码：1556 / 1560

页数：5