MOSSBAUER EMISSION-SPECTROSCOPY OF DOPED CO-571-XO .2. DONOR IMPURITIES - CO-571-XO-FE, TI, IN

被引：4

作者：

FONTCUBERTA, J ^{[1
]}

OBRADORS, X ^{[1
]}

RODRIGUEZ, J ^{[1
]}

TEJADA, J ^{[1
]}

机构：

[1] UNIV BARCELONA,FAC FIS,DIAGONAL 645,BARCELONA 28,SPAIN

来源：

关键词：

D O I：

10.1016/0022-3697(85)90171-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：305 / 308

页数：4

共 8 条

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[2] FONTCUBERTA J, 1984, J PHYS CHEM SOLIDS, V46, P301
[3] HALL-MOBILITY AND DEFECT STRUCTURE IN UNDOPED AND CR OR TI-DOPED COO AT HIGH-TEMPERATURE
GVISHI, M
TANNHAUSER, DS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (04) : 893 - +
[4] HARAMI T, 1984, J PHYS CHEM SOLIDS
[5] HELMS WR, 1974, PHYS REV B, V4, P750
[6] Jarzebski Z.M., 1973, OXIDE SEMICONDUCTORS, V4
[7] Milnes A., 1973, DEEP IMPURITIES SEMI
[8] MOSSBAUER EMISSION-SPECTROSCOPY ON (CO1-XO)-CO-57
TEJADA, J
PARAK, F
[J]. HYPERFINE INTERACTIONS, 1981, 10 (1-4): : 1227 - 1229