GAAS MESFET SMALL-SIGNAL X-BAND AMPLIFIERS

被引：6

作者：

SLAYMAKER, NA ^{[1
]}

SOARES, RA ^{[1
]}

TURNER, JA ^{[1
]}

机构：

[1] PLESSEY CO LTD ALLEN CLARK RES CTR, TOWCESTER, NORTHAMPTONSHIR, ENGLAND

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 06期

关键词：

D O I：

10.1109/TMTT.1976.1128851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：329 / 337

页数：9

共 27 条

[1]

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[2] X-BAND AND KU-BAND AMPLIFIERS WITH GAAS SCHOTTKY-BARRIERS FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (01) :54-58

[3]

BESSER L, 1973, COMPACT REFERENC DEC

[4] MEDIUM-POWER GAAS FIELD-EFFECT TRANSISTORS [J].

DRUKIER, I ;

CAMISA, RL ;

JOLLY, ST ;

HUANG, HC ;

NARAYAN, SY .

ELECTRONICS LETTERS, 1975, 11 (05) :104-105

[5] EQUIVALENT CIRCUIT OF SOME MICROSTRIP DISCONTINUITIES [J].

EASTER, B .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (08) :655-660

[6]

FROEHNER WH, 1967, ELECTRONICS 1016

[7]

FUKUTA M, 1974, IEEE INT ELECTRON DE, P285

[8]

Hammerstad E., 1975, 5th European Microwave Conference, P268

[9]

Hammerstad E., 1975, MICROSTRIP HDB

[10]

James D. S., 1974, 4th European Microwave Conference, P97, DOI 10.1109/EUMA.1974.332020

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