MEASUREMENT OF HOT CARRIER DIFFUSION CONSTANT IN SEMICONDUCTORS

被引:10
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OKAMOTO, K
NISHIZAWA, J
TAKAHASHI, K
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10.1063/1.1713935
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O59 [应用物理学];
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页码:3716 / &
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[1]  
ARTHUR JB, 1954, P PHYS SOC LONDON, VB 68, P43
[2]  
ARTHUR JB, 1956, J ELECTRON, V2, P145
[3]   TEMPERATURE DEPENDENCE OF CONDUCTIVITY EFFECTIVE MASS OF HOLES IN GERMANIUM [J].
CHAMPLIN, KS ;
ARMSTRONG, DB ;
HOLM, JD ;
PATRIN, NA .
PHYSICAL REVIEW LETTERS, 1965, 14 (14) :547-+
[4]   LATTICE MOBILITY OF HOT CARRIERS [J].
CONWELL, E .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :234-239
[5]   NOISE TEMPERATURE OF HOT ELECTRONS IN GERMANIUM [J].
ERLBACH, E ;
GUNN, JB .
PHYSICAL REVIEW LETTERS, 1962, 8 (07) :280-&
[6]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[7]   AVALANCHE INJECTION DIODES [J].
GIBSON, AF ;
MORGAN, JR .
SOLID-STATE ELECTRONICS, 1960, 1 (01) :54-69
[8]  
GIBSON AF, 1956, P PHYS SOC LONDON, VB 69, P488
[9]  
GIBSON AF, 1956, J ELECTRON, V2, P259
[10]  
GOLDBERG C, 1957, PHYS REV, V105, P864