STUDIES OF CRYSTALLINE DEFECTS DURING THE EARLY STAGES OF GROWTH OF SI ON SI(100) AT LOW-TEMPERATURES BY SPOT PROFILE ANALYSIS OF LEED (SPA-LEED)

被引：14

作者：

FALTA, J ^{[1
]}

HENZLER, M ^{[1
]}

机构：

[1] UNIV HANOVER, INST FESTKORPERPHYS, W-3000 HANNOVER, GERMANY

来源：

SURFACE SCIENCE | 1992年 / 269卷

关键词：

D O I：

10.1016/0039-6028(92)91221-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stages of epitaxy of Si on Si(100) have been studied in the low-temperature range from 290 up to 530 K. Using SPA-LEED (spot profile analysis of low-energy electron diffraction) growth imperfections could be detected. At substrate temperatures below 500 K we found that a significant fraction of surface atoms does not grow on lattice sites as given by substrate and surface reconstruction. The increasing number of atoms on non-lattice sites is connected with a drastic loss of superstructure. Only at T > 500 K all deposited atoms take part in the surface reconstruction and are found in perfect lattice sites.

引用

页码：14 / 21

页数：8

共 13 条

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