SYNTHESIS OF TI-AL ALLOYS BY ION-BEAM-ENHANCED DEPOSITION

被引：6

作者：

SETSUHARA, Y

OHSAKO, H

MAKINO, Y

MIYAKE, S

机构：

[1] Welding Research Institute, Osaka University, Ibaraki, Osaka, 567

来源：

SURFACE & COATINGS TECHNOLOGY | 1994年 / 66卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(94)90055-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

Titanium aluminide (Ti-Al) thin films were synthesized by ion-beam-enhanced deposition (IBED), where the films were prepared by depositing Ti and Al metal vapour under simultaneous bombardment with Ar ions in the energy range 2-20 keV. Experiments were undertaken using a compact IBED system with a bucket-type 2.45 GHz electron cyclotron resonance ion source and an electron beam evaporation source. Results of Rutherford backscattering spectrometry have suggested the presence of effective mixing between Al substrate and Ti film deposited under simultaneous bombardment with Ar ions. Glancing angle X-ray diffraction patterns showed that the phase structure of Ti-Al films was determined by both the Ar ion energy and the ArA Ti + Al) transport ratio.

引用

页码：495 / 498

页数：4

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