ELECTRON-TRANSPORT IN DISORDERED SEMICONDUCTORS

被引：6

作者：

BECK, H ^{[1
]}

NETTEL, S ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12181

来源：

PHYSICS LETTERS A | 1984年 / 105卷 / 06期

关键词：

D O I：

10.1016/0375-9601(84)91007-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：319 / 323

页数：5

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