OPTICAL-SAMPLING OF GHZ CHARGE-DENSITY MODULATION IN SILICON BIPOLAR JUNCTION TRANSISTORS

被引：4

作者：

BLACK, A ^{[1
]}

COURVILLE, C ^{[1
]}

SCHULTHEIS, G ^{[1
]}

HEINRICH, H ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 15期

关键词：

D O I：

10.1049/el:19870555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, BIPOLAR

引用

页码：783 / 784

页数：2

共 7 条

[1] MEASUREMENT OF REAL-TIME DIGITAL SIGNALS IN A SILICON BIPOLAR JUNCTION TRANSISTOR USING A NONINVASIVE OPTICAL PROBE [J].

HEINRICH, HK ;

HEMENWAY, BR ;

MCGRODDY, KA ;

BLOOM, DM .

ELECTRONICS LETTERS, 1986, 22 (12) :650-652

[2] DIRECT ELECTRO-OPTIC SAMPLING OF TRANSMISSION-LINE SIGNALS PROPAGATING ON A GAAS SUBSTRATE [J].

KOLNER, BH ;

BLOOM, DM .

ELECTRONICS LETTERS, 1984, 20 (20) :818-819

[3] NONCONTACT ELECTROOPTIC SAMPLING WITH A GAAS INJECTION-LASER [J].

NEES, J ;

MOUROU, G .

ELECTRONICS LETTERS, 1986, 22 (17) :918-919

[4] ELECTROOPTIC SAMPLING OF FAST ELECTRICAL SIGNALS USING AN INGAASP INJECTION-LASER [J].

TAYLOR, AJ ;

WIESENFELD, JM ;

EISENSTEIN, G ;

TUCKER, RS ;

TALMAN, JR ;

KOREN, U .

ELECTRONICS LETTERS, 1986, 22 (02) :61-62

[5] PICOSECOND ELECTROOPTIC SAMPLING SYSTEM [J].

VALDMANIS, JA ;

MOUROU, G ;

GABEL, CW .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :211-212

[6] A FRONT-SIDE-ILLUMINATED INP GAINAS INP P-I-N PHOTODIODE WITH A -3-DB BANDWIDTH IN EXCESS OF 18 GHZ [J].

WANG, SY ;

CAREY, KW ;

KOLNER, BH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :938-940

[7] DIRECT ELECTRO-OPTIC SAMPLING OF GAAS INTEGRATED-CIRCUITS [J].

WEINGARTEN, KJ ;

RODWELL, MJW ;

HEINRICH, HK ;

KOLNER, BH ;

BLOOM, DM .

ELECTRONICS LETTERS, 1985, 21 (17) :765-766

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