THEORETICAL-STUDY OF SILICON DICARBIDE

被引:17
作者
GREEN, S [1 ]
机构
[1] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771
关键词
D O I
10.1086/160837
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
引用
收藏
页码:895 / 901
页数:7
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[12]   BENDING FREQUENCY OF C3 MOLECULE [J].
LISKOW, DH ;
BENDER, CF ;
SCHAEFER, HF .
JOURNAL OF CHEMICAL PHYSICS, 1972, 56 (10) :5075-&
[13]   ABINITIO SCF CALCULATIONS ON MOLECULAR SILICON DIOXIDE [J].
PACANSKY, J ;
HERMANN, K .
JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (03) :963-967
[14]   CONFIGURATION INTERACTION CALCULATION OF POTENTIAL CURVES FOR C3 MOLECULE IN ITS GROUND AND LOWEST-LYING PI-U STATES [J].
PERICRADIC, J ;
ROMELT, J ;
PEYERIMHOFF, SD ;
BUENKER, RJ .
CHEMICAL PHYSICS LETTERS, 1977, 50 (02) :344-350
[15]   ABINITIO CALCULATIONS OF VIBRATIONAL PROPERTIES OF SOME LINEAR TRIATOMIC-MOLECULES .2. ANHARMONIC-FORCE FIELDS [J].
STEELE, D ;
PERSON, WB ;
BROWN, KG .
JOURNAL OF PHYSICAL CHEMISTRY, 1981, 85 (14) :2007-2012
[16]   ABSORPTION-SPECTRUM OF SIC2 RADICAL IN GASEOUS PHASE [J].
VERMA, RD ;
NAGARAJ, S .
CANADIAN JOURNAL OF PHYSICS, 1974, 52 (19) :1938-1948
[17]   SPECTROSCOPY OF SILICON CARBIDE + SILICON VAPORS TRAPPED IN NEON + ARGON MATRICES AT 4DEGREES + 20DEGREESK [J].
WELTNER, W ;
MCLEOD, D .
JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (01) :235-&