DISTRIBUTION OF INCIDENT IONS AND RETAINED DOSE ANALYSIS FOR A WEDGE-SHAPED TARGET IN PLASMA SOURCE ION-IMPLANTATION

被引：25

作者：

MALIK, SM

MULLER, DE

SRIDHARAN, K

FETHERSTON, RP

TRAN, N

CONRAD, JR

机构：

[1] Department of Nuclear Engineering and Engineering Physics, University of Wisconsin, Madison, WI 53706

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.358959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A wedge-shaped target was implanted with nitrogen ions using the plasma source ion implantation process, in order to understand the effects of the target edges on the energy and fluence distribution of incident ions. Experimental measurements and analysis of retained dose on silicon samples affixed on the surface of the target, showed results consistent with those predicted by theoretical models. Higher retained dose and greater implantation depths were observed in the vicinity of the edge contained by the normal angle as compared to the edges contained by the acute angles. The target face with smaller area accumulated, on the average, higher dose compared to the face with the larger area. © 1995 American Institute of Physics.

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页码：1015 / 1019

页数：5

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