THEORY OF LIFETIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS

被引：35

作者：

KUIKEN, HK ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 06期

关键词：

D O I：

10.1016/0038-1101(76)90004-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：447 / 450

页数：4

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[3] BERZ F, 1975, COMMUNICATION
[4] INJECTED CURRENT CARRIER TRANSPORT IN A SEMI-INFINITE SEMICONDUCTOR AND THE DETERMINATION OF LIFETIMES AND SURFACE RECOMBINATION VELOCITIES
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[5] MEASUREMENT OF SPATIAL VARIATIONS OF CARRIER LIFETIME IN SILICON POWER DEVICES
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