THE USE OF METALORGANIC CHEMICAL VAPOR-DEPOSITION TO PREPARE DEVICE QUALITY GA(ASP) STRAINED-LAYER SUPERLATTICES

被引：9

作者：

BIEFELD, RM

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期

关键词：

D O I：

10.1007/BF02659631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 199

页数：7

共 47 条

[1] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[2] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE
BEDAIR, SM
KATSUYAMA, T
TIMMONS, M
TISCHLER, MA
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 45 - 47
[3] BIEFELD RM, 1983, J ELECTRON MATER, V12, P903, DOI 10.1007/BF02655302
[4] THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 382 - 388
[5] PREPARATION OF III-V COMPOUND SEMICONDUCTORS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
[J]. INDUSTRIAL & ENGINEERING CHEMISTRY PRODUCT RESEARCH AND DEVELOPMENT, 1982, 21 (04): : 525 - 528
[6] INDEPENDENTLY VARIABLE BAND-GAPS AND LATTICE-CONSTANTS IN GAASP STRAINED-LAYER SUPER-LATTICES
BIEFELD, RM
GOURLEY, PL
FRITZ, IJ
OSBOURN, GC
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 759 - 761
[7] MORPHOLOGY OF GAAS1-XPX SUPERLATTICES GROWN BY MOCVD AND CHLORIDE VPE
BLAKESLEE, AE
KIBBLER, A
WANLASS, MW
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) : 339 - 345
[8] DIRECT OBSERVATION OF LATTICE DISTORTION IN A STRAINED-LAYER SUPER-LATTICE
BROWN, JM
HOLONYAK, N
LUDOWISE, MJ
DIETZE, WT
LEWIS, CR
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 863 - 865
[9] PLANAR DECHANNELING STUDIES OF STRAINED-LAYER SUPERLATTICE STRUCTURES
CHU, WK
ELLISON, JA
PICRAUX, ST
BIEFELD, RM
OSBOURN, GC
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 81 - 89
[10] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225

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