SURFACE ORIENTATION AND STACKING-FAULT GENERATION IN STRAINED EPITAXIAL-GROWTH

It has been observed that partial dislocation glide and stacking fault introduction occur in diamond cubic materials during tensile mismatched growth on (001) and compressive mismatched growth on (110) and (111). For reversed sense of mismatch, however, only full lattice dislocations are observed for strain relief. The general criteria are presented for when a partial misfit dislocation is possible as a function of growth surface orientation. It is shown that, for zero stacking fault energy, the slip regime (dislocation type) expected during (001) growth will hold for any growth orientation (hkl) for which 0 less-than-or-equal-to h less-than-or-equal-to k less-than-or-equal-to l/2, and the opposite regime should occur for (hkl) when l less-than-or-equal-to k/2 less-than-or-equal-to l. Effects of heterointerfacial line tension and stacking fault energy are also considered.