BONDING IN GAAS

被引:117
作者
ZUO, JM
SPENCE, JCH
OKEEFFE, M
机构
关键词
D O I
10.1103/PhysRevLett.61.353
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:353 / 356
页数:4
相关论文
共 24 条
[1]   ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT [J].
ALDRED, PJE ;
HART, M .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :223-+
[2]   DIRECT MEASUREMENT OF CRYSTALLOGRAPHIC PHASE BY ELECTRON-DIFFRACTION [J].
BIRD, DM ;
JAMES, R ;
PRESTON, AR .
PHYSICAL REVIEW LETTERS, 1987, 59 (11) :1216-1219
[3]  
CHANG SL, 1987, CRYSTALLOGR REV, V1, P87
[4]   STRUCTURE ANALYSIS OF SINGLE CRYSTALS BY ELECTRON DIFFRACTION .1. TECHNIQUES [J].
COWLEY, JM .
ACTA CRYSTALLOGRAPHICA, 1953, 6 (06) :516-521
[6]  
GJONNES K, IN PRESS ACTA CRYS A
[7]  
GOODMAN P, 1976, ACTA CRYSTALLOGR A, V32, P7932
[8]   SCATTERING OF FAST ELECTRONS BY CRYSTALS [J].
HUMPHREYS, CJ .
REPORTS ON PROGRESS IN PHYSICS, 1979, 42 (11) :1825-&
[9]  
Ibers J. A., 1974, INT TABLES XRAY CRYS, VIV
[10]  
KAMBE K, 1957, J PHYS SOC JPN, V12, P1