CURRENT TRANSPORT MECHANISMS OF ELECTROCHEMICALLY DEPOSITED CDS/CSTE HETEROJUNCTION

被引：39

作者：

OU, SS ^{[1
]}

STAFSUDD, OM ^{[1
]}

BASOL, BM ^{[1
]}

机构：

[1] MONOSOLAR INC,LOS ANGELES,CA 90301

来源：

关键词：

D O I：

10.1016/0038-1101(84)90088-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：21 / 25

页数：5

共 13 条

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[4] BASOL BM, 1983, Patent No. 4388483
[5] Bonnet D., 1972, 9TH IEEE PHOT SPEC C, P129
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[7] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS
DONNELLY, JP
MILNES, AG
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &
[8] FRANZ W, 1956, HDB PHYSIK, V17, P155
[9] DARK-CURRENT CONDUCTION PROCESSES IN CDS-CU2S THIN-FILM PHOTOCELLS
MARTINUZZI, S
MALLEM, O
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 16 (01): : 339 - 344
[10] EVALUATION OF CDS-CDTE HETEROJUNCTION SOLAR-CELL
MITCHELL, KW
FAHRENBRUCH, AL
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4365 - 4371