THE RELATION BETWEEN LIFT-OFF OF PHOTORESIST AND THE SURFACE COVERAGE OF TRIMETHYLSILOXY GROUPS ON SILICON-WAFERS - A QUANTITATIVE TIME-OF-FLIGHT SECONDARY ION MASS-SPECTROMETRY AND CONTACT-ANGLE STUDY

被引：22

作者：

PONJEE, JJ ^{[1
]}

MARRIOTT, VB ^{[1
]}

MICHIELSEN, MCBA ^{[1
]}

TOUWSLAGER, FJ ^{[1
]}

VANVELZEN, PNT ^{[1
]}

VANDERWEL, H ^{[1
]}

机构：

[1] PHILIPS RES LABS,POB 80000,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：463 / 466

页数：4

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