ANISOTROPY AND UNIAXIAL-STRESS EFFECTS IN SUBMILLIMETER STIMULATED-EMISSION SPECTRA OF HOT HOLES IN GERMANIUM IN STRONG E-PERPENDICULAR-TO-H FIELDS

被引：7

作者：

MITYAGIN, YA

MURZIN, VN

STEPANOV, ON

STOKLITSKY, SA

机构：

[1] P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The light hole cyclotron stimulated emission in p-Ge in strong E perpendicular-to H fields was studied as a function of E and H field orientation and uniaxial stress applied to the crystal. Quantum model calculations of light hole scattering rates and Landau level population are used to interpret the results. The low frequency part of the intersubband emission spectra was investigated, and new emission lines were found. The role of impurity transitions in stimulated emission processes is discussed.

引用

页码：B641 / B644

页数：4

共 12 条

[1]

ANDRONOV AA, 1986, SUBMILLIMETER SEMICO, P123

[2] REMARKABLE EFFECTS OF UNIAXIAL-STRESS ON STIMULATED FAR IR EMISSION FROM HOT HOLES IN GERMANIUM IN CROSSED ELECTRIC AND MAGNETIC-FIELDS [J].