NORMAL STATE PROPERTIES OF HIGH-TC OXIDES

被引:20
作者
HIRSCH, JE
MARSIGLIO, F
机构
[1] ATOM ENERGY CANADA LTD RES,CHALK RIVER LABS,THEORET PHYS BRANCH,CHALK RIVER K0J 1J0,ONTARIO,CANADA
[2] MCMASTER UNIV,DEPT PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA
来源
PHYSICA C | 1992年 / 195卷 / 3-4期
关键词
D O I
10.1016/0921-4534(92)90361-F
中图分类号
O59 [应用物理学];
学科分类号
摘要
We discuss the expected behavior of normal state properties of high-T(c) oxides within the framework of the theory of hole superconductivity. The basic assumptions are: the normal state is a Fermi liquid, the bandwidth varies with carrier concentration, and the carrier concentration varies with temperature. We calculate the temperature and doping dependence of Hall number. resistivity, thermopower. magnetic susceptibility and nuclear spin relaxation rate, as well as the dependence of T(c) on the hole concentration at room temperature. Some of our results exhibit remarkable qualitative agreement with experiment. Experiments that would test the key prediction of bandwidth expansion with hole doping are discussed.
引用
收藏
页码:355 / 366
页数:12
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