ACOUSTIC-SIGNALS FROM LASER-ANNEALED AMORPHOUS-SILICON

被引：22

作者：

BALTZER, N ^{[1
]}

VONALLMEN, M ^{[1
]}

SIGRIST, MW ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,DEPT PHYS,CH-8092 ZURICH,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：826 / 828

页数：3

共 11 条

[1]

AUSTON DM, 1978, APPL PHYS LETT, V35, P437

[2] ELECTRONIC DILATION IN GERMANIUM AND SILICON [J].

GAUSTER, WB .

PHYSICAL REVIEW, 1969, 187 (03) :1035-&

[3] ELECTRONIC VOLUME EFFECT IN SILICON [J].

GAUSTER, WB ;

HABING, DH .

PHYSICAL REVIEW LETTERS, 1967, 18 (24) :1058-&

[4] THERMAL EXPANSION OF SILICON AND ZINE OXIDE (I) [J].

IBACH, H .

PHYSICA STATUS SOLIDI, 1969, 31 (02) :625-+

[5]

SIGRIST MW, 1982, P INT C LASERS 81 NE, P525

[6]

TSU R, 1979, ELECTROCHEM SOC EXTE, V79, P1308

[7]

TSU R, 1980, LASER ELECTRON BEAM, P382

[8] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

[9]

VANVECHTEN JA, UNPUB SEMICONDUCTOR

[10]

VANVECHTEN JA, 1980, J PHYS-PARIS, V41, P15

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