SUBSTITUTIONAL AND DEFECT DOPING EFFECTS ON THE PHOTOELECTROCHEMICAL PROPERTIES OF FE2O3

被引：6

作者：

HOULIHAN, JF ^{[1
]}

PANNAPARAYIL, T ^{[1
]}

BURDETTE, HL ^{[1
]}

MADACSI, DP ^{[1
]}

POLLOCK, RJ ^{[1
]}

机构：

[1] UNIV CONNECTICUT,GROTON,CT

来源：

MATERIALS RESEARCH BULLETIN | 1985年 / 20卷 / 02期

关键词：

D O I：

10.1016/0025-5408(85)90042-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：163 / 177

页数：15

共 13 条

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