LATTICE LOCATION AND IONIZATION INDUCED ANNEALING OF SELF-INTERSTITIALS IN BORON-IMPLANTED SILICON BY RUTHERFORD BACKSCATTERING

被引：8

作者：

GOTZ, G ^{[1
]}

SOMMER, G ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV,SEKT PHYS,JENA,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 02期

关键词：

D O I：

10.1002/pssa.2210320261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K151 / K154

页数：4

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ALEXANDER, RB ;

CALLAGHAN, PT ;

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[2]

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[3]

CORBETT JW, 1974, POINT DEFECTS SOLIDS, V2

[4]

FRANK W, 1974, INT C DEFECTS SEMICO

[5]

GLASER E, UNPUBLISHED WORK

[6] EPR EVIDENCE OF SELF-INTERSTITIALS IN NEUTRON-IRRADIATED SILICON [J].

LEE, YH ;

CORBETT, JW .

[7]

SOMMER G, 1975, THESIS FRIEDRICH SCH

[8]

Westmoreland J. E., 1970, Radiation Effects, V6, P161, DOI 10.1080/00337577008236293

WESTMORELAND, JE ;

MAYER, JW ;

EISEN, FH ;

WELCH, B .