DOPING OF GAAS AND INP IN MOMBE USING DEZN, TESN AND DETE

被引：8

作者：

MUSOLF, J

MARX, D

KOHL, A

WEYERS, M

BALK, P

机构：

[1] Institute of Semiconductor Electronics, Technical University Aachen

来源：

关键词：

D O I：

10.1016/0022-0248(91)90602-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：1043 / 1044

页数：2

共 3 条

[1] SN INCORPORATION IN GAAS BY MOLECULAR-BEAM EPITAXY [J].

ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11) :L1760-L1762

[2] GASEOUS DOPANT SOURCES IN MOMBE/CBE [J].

WEYERS, M ;

MUSOLF, J ;

MARX, D ;

KOHL, A ;

BALK, P .

[3] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WOOD, CEC ;

JOYCE, BA .