A NEW SELF-ALIGNING PROCESS FOR WHOLE-WAFER TUNNEL JUNCTION FABRICATION

被引：14

作者：

BLAMIRE, MG ^{[1
]}

EVETTS, JE ^{[1
]}

HASKO, DG ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT PHYS,MICROELECTR RES LAB,CAMBRIDGE CB4 4SW,ENGLAND

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1109/20.92487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1123 / 1126

页数：4

共 9 条

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[9] NB/AL-OXIDE/NB TUNNEL-JUNCTIONS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].

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