2-DIMENSIONAL NUMERICAL-SIMULATION OF SEMICONDUCTOR GAS SENSORS

被引：73

作者：

GERGINTSCHEW, Z

FORSTER, H

KOSITZA, J

SCHIPANSKI, D

机构：

[1] Technical University of Ilmenau, Institute for Solid State Electronics, Ilmenau

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 26卷 / 1-3期

关键词：

NUMERICAL SIMULATION; GAS SENSORS; SEMICONDUCTOR GAS SENSORS;

D O I：

10.1016/0925-4005(94)01580-B

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Models for gas chemosorption on metal-oxide layers and their implementation in a two-dimensional device simulation are the subject of this paper. First application examples and the simulation results like the work function change on the sensitive layer of a suspended-gate field-effect transistor and the current modulation in a ZnO layer are shown here. The chemosorption dependence on parameters such as the electrical field and sensitive layer doping is further discussed.

引用

页码：170 / 173

页数：4

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