PROPERTIES OF GAINAS(P)/INP MULTILAYERS AND SUPERLATTICES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE

By using AP MOVPE, lattice matched GaInAs/InP multilayers and superlattices with up to 80 periods have been successfully obtained with thickness fluctuations over the superlattice of less than +/- 2.5% on a 2 inch wafer. Excellent X-ray diffraction spectra have been recorded on the superlattices, exhibiting up to 7 harmonic peak satellites. A 4 K strong photoluminescence (PI) intensity has been detected on these structures, the luminescence linewidth being as low as 6 meV for 20-period superlattices, i.e., quite similar to that obtained with a single quantum well (QW). Finally, the excellent quality of these structures has been confirmed by their performances in passive and active guided optics.