HIGH OPTICAL AND ELECTRICAL QUALITY GAINAS/INP, GAAS/INP DOUBLE HETEROSTRUCTURES FOR OPTOELECTRONIC INTEGRATION

By using MOVPE at atmospheric pressure, double heterostructure InP/GaInAs with a GaAs top layer has been grown in the same reactor without generating any limitation in device performance. Thickness and composition uniformity all over 2 inch wafer are in the range of +/- 3% and 0.1%, respectively. Excellent planar photodiodes with very low leakage current of 2X10(-7) A/cm2 have been prepared. GaAs MESFETS integrated with photodiodes have been achieved with performances (transconductance = 120 mS/mm for 1-mu-m gate length) similar to those observed for the standard process on GaAs substrates.