GAAS-MESFETS FABRICATED ON INP SUBSTRATES

被引：29

作者：

ASANO, K

KASAHARA, K

ITOH, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 07期

关键词：

D O I：

10.1109/EDL.1987.26634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / 290

页数：2

共 11 条

[1] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J].

AKSUN, MI ;

MORKOC, H ;

LESTER, LF ;

DUH, KHG ;

SMITH, PM ;

CHAO, PC ;

LONGERBONE, M ;

ERICKSON, LP .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1654-1655

[2] HIGH-PERFORMANCE SELF-ALIGNED GATE (AL,GA)AS/GAAS MODFETS ON MBE LAYERS GROWN ON (100) SILICON SUBSTRATES [J].

ARCH, DK ;

MORKOC, H ;

VOLD, PJ ;

LONGERBONE, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :635-637

[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J].

CHOI, HK ;

TSAUR, BY ;

METZE, GM ;

TURNER, GW ;

FAN, JCC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :207-208

[4] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J].

DENTAI, AG ;

JOYNER, CH ;

TELL, B ;

ZYSKIND, JL ;

SULHOFF, JW ;

FERGUSON, JF ;

CENTANNI, JC ;

CHU, SNG ;

CHENG, CL .

ELECTRONICS LETTERS, 1986, 22 (22) :1186-1188

[5] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[6] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[7] GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS WITH A LATTICE-MISMATCHED REDUCED LEAKAGE CURRENT GAAS GATE [J].

GARBINSKI, PA ;

CHEN, CY ;

CHO, AY .

ELECTRONICS LETTERS, 1986, 22 (05) :236-238

[8]

ITOH T, 1986, DEC IEDM, P771

[9]

ITOH T, 1986, AUG P INT C SOL STAT, P779

[10]

SHICHIJO H, 1986, DEC IEDM, P748

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