MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSTE EPILAYERS AND ZNSTE/ZNSE SUPERLATTICES ON SI SUBSTRATES

被引：3

作者：

CHAN, YW

WANG, H

SOU, IK

WONG, KS

WONG, GKL

机构：

[1] Department of Physics, Hong Kong University of Science and Technology, Kowloon, Clear Water Bay Road

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80042-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnS1-xTex/ZnSe superlattices with x = 0.02 and 0.07 have been grown using the molecular beam epitaxy (MBE) technique. Room temperature photoluminescence from ZnSo(0.98)Te(0.02)/ZnSe superlattices is dominanted by strong recombination radiation from ZnSe wells. Under high photoexcitation intensity, room temperature stimulated emission from this superlattice has been observed. In contrast, ZnS0.93Te0.07/ZnSe superlattices only exhibits a weak, broad luminescence band that is characteristic of isoelectronic centers. These observed results can be attributed to the difference in the energies of hole traps in the barrier layers of these supprlattices.

引用

页码：760 / 764

页数：5