GROWTH OF ZNSE/ZNS STRAINED-LAYER SUPERLATTICES ON SI SUBSTRATES

被引：21

作者：

YOKOGAWA, T

SATO, H

OGURA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5201 / 5205

页数：5

共 17 条

[1] EXCITON BINDING-ENERGY IN QUANTUM WELLS [J].

BASTARD, G ;

MENDEZ, EE ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW B, 1982, 26 (04) :1974-1979

[2] LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

CHONG, TC ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :221-223

[3] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

DEPPE, DG ;

HOLONYAK, N ;

NAM, DW ;

HSIEH, KC ;

JACKSON, GS ;

MATYI, RJ ;

SHICHIJO, H ;

EPLER, JE ;

CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (09) :637-639

[4] THE EFFECT OF PRESSURE ON ZINC BLENDE AND WURTZITE STRUCTURES [J].

EDWARDS, AL ;

SLYKHOUSE, TE ;

DRICKAMER, HG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) :140-148

[5] EPITAXIAL-GROWTH OF ZNS ON SI BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

HIRABAYASHI, K ;

KOGURE, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (12) :1590-1593

[6] POLAR-ON-NONPOLAR EPITAXY [J].

KROEMER, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :193-204

[7] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J].

MILLER, RC ;

KLEINMAN, DA ;

TSANG, WT ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1981, 24 (02) :1134-1136

[8] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS [J].

MINO, N ;

KOBAYASHI, M ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :793-796

[9] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].

MITSUHASHI, H ;

MITSUISHI, I ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580

[10] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

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