PIEZORESISTANCE AND PIEZO-HALL EFFECTS IN N- AND P-TYPE ALUMINUM ANTIMONIDE

[41] STIRN RJ, 1966, THESIS PURDUE U

[42] STIRN RJ, PRIVATE COMMUNICATIO

[43] TUFTE ON, 1964, PHYS REV, V133, P1450

[44] PIEZORESISTIVE PROPERTIES OF HEAVILY DOPED N-TTPE SILICON [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1705 - +

[45] INFRARED LATTICE BANDS IN A1SB [J]. PHYSICAL REVIEW, 1962, 127 (01): : 126 - +

[46] INFRARED ABSORPTION IN N-TYPE ALUMINUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1960, 117 (04): : 1003 - 1004

[47] WILLARDSON RK, 1962, COMPOUND SEMICOND ED, V1, P159

[41] STIRN RJ, 1966, THESIS PURDUE U

[42] STIRN RJ, PRIVATE COMMUNICATIO

[43] TUFTE ON, 1964, PHYS REV, V133, P1450

[44] PIEZORESISTIVE PROPERTIES OF HEAVILY DOPED N-TTPE SILICON [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1705 - +

[45] INFRARED LATTICE BANDS IN A1SB [J]. PHYSICAL REVIEW, 1962, 127 (01): : 126 - +

[46] INFRARED ABSORPTION IN N-TYPE ALUMINUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1960, 117 (04): : 1003 - 1004

[47] WILLARDSON RK, 1962, COMPOUND SEMICOND ED, V1, P159