THE SILICON (110) SURFACE - POSSIBLE STRUCTURAL MODELS

被引：31

作者：

NESTERENKO, BA

SHKREBTII, AI

机构：

来源：

SURFACE SCIENCE | 1989年 / 213卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(89)90291-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：309 / 315

页数：7

共 15 条

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[2]

[Anonymous], ELECTRONIC STRUCTURE

[3] SURFACES OF SILICON [J].

HANEMAN, D .

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[4] FORMATION OF SURFACE SUPERSTRUCTURES BY HEAT-TREATMENTS ON NI-CONTAMINATED SURFACE OF SI(110) [J].

ICHINOKAWA, T ;

AMPO, H ;

MIURA, S ;

TAMURA, A .

PHYSICAL REVIEW B, 1985, 31 (08) :5183-5186

[5] LATTICE GAS-MODEL ANALYSIS OF THE (111) SURFACE-STRUCTURES OF SI, GE AND RELATED SYSTEMS .2. ON THE DAS MODEL [J].

KANAMORI, J .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1986, 55 (08) :2723-2734

[6] SI(100)2XN STRUCTURES INDUCED BY NI CONTAMINATION [J].

KATO, K ;

IDE, T ;

MIURA, S ;

TAMURA, A ;

ICHINOKAWA, T .

SURFACE SCIENCE, 1988, 194 (1-2) :L87-L94

[7] THE ADSORPTION BEHAVIOR OF O-2 ON THE CLEAN SI(110) SURFACE IN THE EARLY STAGE [J].

KEIM, EG ;

VANSILFHOUT, A .

SURFACE SCIENCE, 1987, 186 (03) :L557-L560

[8] SIMILARITY OF SI(110)5X1 AND SI(111)2X1 SURFACES [J].

MARTENSSON, P ;

HANSSON, GV ;

CHIARADIA, P .

PHYSICAL REVIEW B, 1985, 31 (04) :2581-2583

[9] STRUCTURAL PHASE-TRANSITIONS AND SOME ELECTRONIC-PROPERTIES OF THE (110)SILICON SURFACE [J].

NESTERENKO, BA ;

BROVII, AV ;

SOROKOVYKH, AI .

SURFACE SCIENCE, 1986, 171 (03) :495-500

[10]

NESTERENKO BA, 1987, POVERKHNOST, V7, P143

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