IMAGING CHARGE-COUPLED DEVICE (CCD) TRANSIENT-RESPONSE TO 17 AND 50 MEV PROTON AND HEAVY-ION IRRADIATION

We report the results of irradiating a high-resolution, large-area, silicon charge-coupled device (CCD) imaging array (Kodak KAF-1400) with controlled low fluxes of collimated monoenergetic (17 and 50 MeV) protons and selected heavy ions. We measured the CCD response at several angles-of-incidence, from normal to 70° off normal and at several azimuthal angles. The transient response events were recorded and analyzed to infer the effective charge collection depth of the CCD. We analyzed selected individual proton-induced events for their two-dimensional spatial amplitude and compared the results to a charge collection model which included contributions from both the pixel depletion and diffusion volumes for the geometry (pixel size and spacing) and thicknesses (depletion depth and epitaxial layer thickness) of this CCD. © 1990 IEEE