THE EFFECT OF GRADING ON THE ELECTRICAL BEHAVIOR OF NP ALGAAS/GAAS HETEROJUNCTION DIODES

被引：5

作者：

FISCHER, R

HENDERSON, T

KLEM, J

CHAND, N

MORKOC, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期

关键词：

D O I：

10.1016/0038-1101(86)90039-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 198

页数：6

共 17 条

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