COMPENSATED-SURFACE OXIDE-PASSIVATED SILICON JUNCTION RADIATION DETECTORS

被引：5

作者：

HANSEN, WL

LOTHROP, RP

GOULDING, FS

机构：

来源：

关键词：

D O I：

10.1063/1.1729688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1570 / &

相关论文

共 4 条

[1] DABBS JWT, 1961, SEMICONDUCTOR NUCLEA, P871
[2] FOX RJ, 1962, IRE T NUCL SCI, VNS9, P213
[3] GIBSON WM, 1962, B AM PHYS SOC, V7, P558
[4] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS
GOULDING, FS
HANSEN, WL
[J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 249 - 262