SINGLE-MODE LASERS FOR OPTICAL COMMUNICATIONS

被引：17

作者：

BOTEZ, D

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1982年 / 129卷 / 06期

关键词：

D O I：

10.1049/ip-i-1.1982.0052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：237 / 251

页数：15

共 115 条

[1]

ACKLEY DE, 1982, 8TH IEEE INT SEM LAS

[2] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].

AIKI, K ;

NAKAMURA, M ;

KURODA, T ;

UMEDA, J ;

ITO, R ;

CHINONE, N ;

MAEDA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94

[3] NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS [J].

AMANN, MC .

ELECTRONICS LETTERS, 1979, 15 (14) :441-442

[4]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[5]

Bezotosnyi V. V., 1981, Soviet Journal of Quantum Electronics, V11, P1208, DOI 10.1070/QE1981v011n09ABEH008309

[6] LARGE OPTICAL CAVITY ALGAAS BURIED HETEROSTRUCTURE WINDOW LASERS [J].

BLAUVELT, H ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (12) :1029-1031

[7] CONSTRICTED DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS [J].

BOTEZ, D ;

ZORY, P .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :261-263

[8] EFFECTIVE REFRACTIVE-INDEX AND 1ST-ORDER-MODE CUTOFF CONDITIONS IN INGAASP/INP DH LASER STRUCTURES (LAMBDA=1.2-1.6-MU-) [J].

BOTEZ, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) :865-870

[9] CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS [J].

BOTEZ, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) :2290-2309

[10] CW HIGH-POWER SINGLE-MODE OPERATION OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS WITH A LARGE OPTICAL CAVITY [J].

BOTEZ, D .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :190-192

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