PHOTOACOUSTIC OBSERVATION OF THE EXCITON EFFECT IN GASE

被引：7

作者：

TODOROVIC, DM

NIKOLIC, PM

机构：

来源：

APPLIED OPTICS | 1985年 / 24卷 / 14期

关键词：

D O I：

10.1364/AO.24.002252

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：2252 / 2255

页数：4

共 18 条

[1] PHOTOELECTRIC PROPERTIES OF GASE [J].

ADDUCI, F ;

FERRARA, M ;

TANTALO, P ;

CINGOLAN.A ;

MINAFRA, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01) :303-310

[2]

ANTONOPOULOS JG, 1979, CHEM CHRON, V8, P201

[3] PHOTO-ACOUSTIC SATURATION SPECTRA OF GASE, GATE AND INSE LAYERED SEMICONDUCTORS [J].

BALDASSARRE, L ;

CINGOLANI, A .

SOLID STATE COMMUNICATIONS, 1982, 44 (05) :705-707

[4] INTRINSIC AND DEEP-LEVEL PHOTOACOUSTIC-SPECTROSCOPY OF GAAS (CR) AND OF OTHER BULK SEMICONDUCTORS [J].

EAVES, L ;

VARGAS, H ;

WILLIAMS, PJ .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :768-770

[5] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1957, 108 (06) :1384-1389

[6] USE OF PHOTOACOUSTIC CELL FOR INVESTIGATING ELECTRON-PHONON INTERACTION IN SEMICONDUCTORS [J].

GHIZONI, CC ;

SIQUEIRA, MAA ;

VARGAS, H ;

MIRANDA, LCM .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :554-556

[7] 2-DIMENSIONAL INDIRECT EXCITON IN LAYER-TYPE SEMICONDUCTOR GASE [J].

KAMIMURA, H ;

NAKAO, K ;

NISHINA, Y .

PHYSICAL REVIEW LETTERS, 1969, 22 (25) :1379-&

[8] PHOTOACOUSTIC SIGNAL CHANGES ASSOCIATED WITH VARIATIONS IN SEMICONDUCTOR CRYSTALLINITY [J].

MCCLELLAND, JF ;

KNISELEY, RN .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :585-587

[9]

MCDAVID JM, 1979, TOPICAL M PHOTOACOUS

[10] PHOTOACOUSTIC MEASUREMENTS OF ION-IMPLANTED AND LASER-ANNEALED GAAS [J].

MCFARLANE, RA ;

HESS, LD .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :137-139

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