GROWTH OF THE ROOM-TEMPERATURE AU/SI(111)-(7 X 7) INTERFACE

被引：104

作者：

YEH, JJ

HWANG, J

BERTNESS, K

FRIEDMAN, DJ

CAO, R

LINDAU, I

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] LUND UNIV,MAX LAB,S-22100 LUND,SWEDEN

[3] SSRL,STANFORD,CA 94305

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.70.3768

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Synchrotron radiation photoemission spectroscopy suggests that the room temperature grown Au/Si(111) interface is an abrupt interface with the contact made by metallic Au and bulk Si. Si 2p core level spectra show no sign of an interface component, but only the surface reacted and bulk Si components during the growth of the interface. A surface Au-Si alloy film is first formed for Au coverages below 3 monolayers. The alloy is then stabilized into an Au3Si-like film and detached from the Si substrate when metallic Au starts nucleation in between.

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页码：3768 / 3771

页数：4

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