PHOTOEMISSION-STUDY OF THE ANNEALED AU/SI INTERFACE

被引：5

作者：

CAO, R

YEH, JJ

NOGAMI, J

LINDAU, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573789

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：846 / 847

页数：2

共 9 条

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[8] LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY AND AUGER-ELECTRON-SPECTROSCOPY STUDIES OF NOBLE-METAL SILICON INTERFACES - SI-AU SYSTEM [J].

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