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CALCULATION OF LOCAL DENSITY OF STATES AT DEFECTS IN DIAMOND AND SILICON

被引：5
作者：
JONES, R
KING, T
机构：
来源：
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词：
D O I：
10.1016/0378-4363(83)90228-0
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：72 / 75
页数：4
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