INTERFACE SHAPE STUDIES FOR SILICON RIBBON GROWTH BY THE EFG TECHNIQUE .1. TRANSPORT PHENOMENA MODELING

被引：31

作者：

KALEJS, JP ^{[1
]}

CHIN, LY ^{[1
]}

CARLSON, FM ^{[1
]}

机构：

[1] CLARKSON COLL TECHNOL,DEPT CHEM ENGN,POTSDAM,NY 13676

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90176-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：473 / 484

页数：12

共 13 条

[1]

CARLSON FM, UNPUB

[2]

CARLSON FM, 1981, ANN M MATERIALS RES

[3]

CHALMERS B, 1975, NSFRANNSEGI37067XFR7

[4] LATERAL SOLUTE SEGREGATION DURING UNIDIRECTIONAL SOLIDIFICATION OF A BINARY ALLOY WITH A CURVED SOLID-LIQUID INTERFACE .2. LARGE DEPARTURES FROM PLANARITY [J].

CORIELL, SR ;

BOISVERT, RF ;

REHM, RG ;

SEKERKA, RF .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :167-175

[5] LATERAL SOLUTE SEGREGATION DURING UNIDIRECTIONAL SOLIDIFICATION OF A BINARY ALLOY WITH A CURVED SOLID-LIQUID INTERFACE [J].

CORIELL, SR ;

SEKERKA, RF .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) :479-482

[6] EFFECT OF HEAT-TRANSFER ON MELT SOLID INTERFACE SHAPE AND SOLUTE SEGREGATION IN EDGE-DEFINED FILM-FED GROWTH - FINITE-ELEMENT ANALYSIS [J].

ETTOUNEY, HM ;

BROWN, RA .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (02) :313-329

[7]

Kalejs J. P., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P13

[8] ALUMINUM REDISTRIBUTION IN EFG OF SILICON RIBBON [J].

KALEJS, JP ;

FREEDMAN, GM ;

WALD, FV .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (01) :74-84

[9] INTERFACE SHAPE STUDIES FOR SILICON RIBBON GROWTH BY THE EFG TECHNIQUE .2. EFFECT OF DIE ASYMMETRY [J].

KALEJS, JP .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :485-493

[10] HIGH-SPEED EFG OF WIDE SILICON RIBBON [J].

KALEJS, JP ;

MACKINTOSH, BH ;

SUREK, T .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :175-192

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