INTERFACE SHAPE STUDIES FOR SILICON RIBBON GROWTH BY THE EFG TECHNIQUE .2. EFFECT OF DIE ASYMMETRY

被引：19

作者：

KALEJS, JP

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90177-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：485 / 493

页数：9

共 9 条

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[4] HIGH-SPEED EFG OF WIDE SILICON RIBBON [J].

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[6] INTERFACE SHAPE STUDIES FOR SILICON RIBBON GROWTH BY THE EFG TECHNIQUE .1. TRANSPORT PHENOMENA MODELING [J].

KALEJS, JP ;

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JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :473-484

[7] IMPERFECTIONS AND IMPURITIES IN EFG SILICON RIBBONS [J].

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[9]

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