PHOTOCONDUCTIVITY MEASUREMENTS IN A-SI-H BY FREQUENCY-RESOLVED SPECTROSCOPY

被引:26
作者
WAGNER, D
IRSIGLER, P
DUNSTAN, DJ
机构
[1] JOHANNES KEPLER UNIV,ANGEW PHYS,A-4040 LINZ,AUSTRIA
[2] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 36期
关键词
D O I
10.1088/0022-3719/17/36/030
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:6793 / 6799
页数:7
相关论文
共 17 条
[1]  
Boer K. W., 1961, PHYS STATUS SOLIDI, V1, P275, DOI 10.1002/pssb.19610010402
[2]   TRAPPING AND RECOMBINATION MEASUREMENT BY A LIGHT MODULATION TECHNIQUE [J].
CHEROFF, G ;
HEER, J ;
TRIEBWASSER, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :51-55
[3]  
DEPINNA SP, 1984, UNPUB PHIL MAG B
[4]   A DIRECT DETERMINATION OF THE LIFETIME DISTRIBUTION OF THE 1.4 EV LUMINESCENCE OF A-SI-H [J].
DUNSTAN, DJ ;
DEPINNA, SP ;
CAVENETT, BC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13) :L425-L429
[5]  
FASSBENDER J, 1949, ANN PHYS-BERLIN, V6, P215
[6]   DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
HVAM, JM ;
BRODSKY, MH .
PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374
[7]   ON THE APPLICATION OF THE MEYER-NELDEL RULE TO A-SI-H [J].
IRSIGLER, P ;
WAGNER, D ;
DUNSTAN, DJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (34) :6605-6613
[8]  
IRSIGLER P, 1984, J NONCRYST SOLIDS
[9]   ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J].
JACKSON, WB ;
STREET, RA ;
THOMPSON, MJ .
SOLID STATE COMMUNICATIONS, 1983, 47 (06) :435-438
[10]   EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J].
KAGAWA, T ;
FURUKAWA, S ;
MATSUMOTO, N .
PHYSICAL REVIEW B, 1982, 26 (08) :4714-4716