NEW HETEROSTRUCTURE JUNCTION FIELD-EFFECT TRANSISTOR (HJFET)

被引:4
作者
SIMMONS, JG [1 ]
TAYLOR, GW [1 ]
机构
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1049/el:19860799
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1167 / 1169
页数:3
相关论文
共 3 条
[1]   A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY [J].
TAYLOR, GW ;
SIMMONS, JG ;
CHO, AY ;
MAND, RS .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :596-600
[2]   THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].
TAYLOR, GW ;
SIMMONS, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367
[3]   HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) [J].
TAYLOR, GW ;
SIMMONS, JG .
ELECTRONICS LETTERS, 1986, 22 (15) :784-786