IMPROVEMENTS ON THE ELECTRICAL AND LUMINESCENT PROPERTIES OF REACTIVE MOLECULAR-BEAM EPITAXIALLY GROWN GAN FILMS BY USING AIN-COATED SAPPHIRE SUBSTRATES

被引：298

作者：

YOSHIDA, S

MISAWA, S

GONDA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.93952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：427 / 429

页数：3

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[1] GROWTH, CRYSTALLOGRAPHIC AND ELECTRICAL ASSESSMENT OF EPITAXIAL LAYERS OF ALUMINUM NITRIDE ON CORUNDUM SUBSTRATES
CALLAGHAN, MP
PATTERSON, E
RICHARDS, BP
WALLACE, CA
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 22 (02) : 85 - 98
[2] DEAN PJ, 1977, TOPICS APPLIED PHYSI, V17, P118
[3] FITZGERALD R, 1973, MICROPROBE ANAL
[4] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN
ILEGEMS, M
LOGAN, RA
DINGLE, R
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3797 - &
[5] EFFICIENT INJECTION MECHANISM FOR ELECTROLUMINESCENCE IN GAN
JACOB, G
BOIS, D
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 412 - 414
[6] GROWTH MORPHOLOGY AND SURFACE-ACOUSTIC-WAVE MEASUREMENTS OF AIN FILMS ON SAPPHIRE
LIU, JK
LAKIN, KM
WANG, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3703 - 3706
[7] GROWTH KINETICS AND CATALYTIC EFFECTS IN VAPOR-PHASE EPITAXY OF GALLIUM NITRIDE
LIU, SS
STEVENSON, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1161 - 1169
[8] PREPARATION, STABILITY, AND LUMINESCENCE OF GALLIUM NITRIDE
LORENZ, MR
BINKOWSKI, BB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 24 - 26
[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
MANASEVIT, HM
ERDMANN, FM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +
[10] VIOLET LUMINESCENCE OF MG-DOPED GAN
MARUSKA, HP
STEVENSON, DA
PANKOVE, JI
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 303 - 305