CAPACITIVE EFFECTS IN INSULATORS OR SEMICONDUCTORS - INFLUENCE OF DENSITY OF STATES IN GAP

被引：6

作者：

MEAUDRE, R ^{[1
]}

MEAUDRE, M ^{[1
]}

机构：

[1] UNIV LYON 1, PHYS ELECTR LAB, F-69621 VILLEURBANNE, FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 37卷 / 02期

关键词：

D O I：

10.1002/pssa.2210370234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：633 / 643

页数：11

共 31 条

[1] DIELECTRIC PROPERTIES OF THIN FILMS OF ALUMINIUM OXIDE AND SILICON OXIDE [J].

ARGALL, F ;

JONSCHER, AK .

THIN SOLID FILMS, 1968, 2 (03) :185-&

[2]

AVEN M, 1967, PHYSICS CHEMISTRY 2

[3] POLARIZATION IN POTASSIUM CHLORIDE CRYSTALS [J].

BEAUMONT, JH ;

JACOBS, PWM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :657-&

[4]

BUBE RH, 1974, ELECTRONIC PROPERTIE

[5] POLARIZATION IN ELECTROLYTIC SOLUTIONS .1. THEORY [J].

CHANG, HC ;

JAFFE, G .

JOURNAL OF CHEMICAL PHYSICS, 1952, 20 (07) :1071-1077

[6]

Cherki C., 1970, Physica Status Solidi A, V2, P785, DOI 10.1002/pssa.19700020415

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[8]

COELHO R, 1965, COURS ECOLE SUP ELEC

[9] FIELD DEPENDENCE OF RELAXATION PHENOMENA IN SPUTTERED SILICON OXIDE-FILMS [J].

EVERSZUMRODE, K ;

RABUS, W .

THIN SOLID FILMS, 1972, 9 (03) :465-+

[10]

FOWLER JF, 1956, P ROY SOC A, V236, P484

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