HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY STUDY OF THE SB-GAAS(110) SYSTEM

被引：3

作者：

ANNOVI, G

BETTI, MG

DELPENNINO, U

MARIANI, C

机构：

[1] Dipartimento di Fisica, Università di Modena, I-41100 Modena

来源：

VACUUM | 1990年 / 41卷 / 1-3期

关键词：

D O I：

10.1016/0042-207X(90)90454-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of the Sb{single bond}GaAs(110) system, over a wide range of coverage, by means of High Resolution Electron Energy Loss Spectroscopy is presented. A structure related to an electronic transition proper of antimony is shown and interpreted. The influence of Sb on the Fuchs-Kliewer phonon as well as on the free carrier plasmon of n-doped GaAs is shown and related to screening properties of the overlayer, in correspondance to a critical coverage of about 15 monolayers. © 1990 Pergamon Press plc.

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页码：695 / 698

页数：4

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