DYNAMIC IMPURITIES IN ULTRAPURE SEMICONDUCTORS

被引：17

作者：

FALICOV, LM

HALLER, EE

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 53卷 / 12期

关键词：

D O I：

10.1016/0038-1098(85)90890-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1121 / 1125

页数：5

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[1] ACCEPTOR COMPLEXES IN GERMANIUM - SYSTEMS WITH TUNNELING HYDROGEN
HALLER, EE
JOOS, B
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[J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4729 - 4739
[2] PHYSICS OF ULTRA-PURE GERMANIUM
HALLER, EE
HANSEN, WL
GOULDING, FS
[J]. ADVANCES IN PHYSICS, 1981, 30 (01) : 93 - 138
[3] DONOR COMPLEX WITH TUNNELING HYDROGEN IN PURE GERMANIUM
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HALLER, EE
FALICOV, LM
[J]. PHYSICAL REVIEW B, 1980, 22 (02): : 832 - 840
[4] PHOTOELECTRIC SPECTROSCOPY - NEW METHOD OF ANALYSIS OF IMPURITIES IN SEMICONDUCTORS
KOGAN, SM
LIFSHITS, TM
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01): : 11 - 39
[5] MECHANISMS OF CHARGE-STATE DETERMINATION IN HYDROGEN-BASED IMPURITY COMPLEXES IN CRYSTALLINE GERMANIUM
OLIVA, J
[J]. PHYSICAL REVIEW B, 1984, 29 (12) : 6846 - 6858
[6] ELECTRONIC-STRUCTURE OF HYDROGEN-BASED IMPURITY COMPLEXES IN CRYSTALLINE GERMANIUM
OLIVA, J
FALICOV, LM
[J]. PHYSICAL REVIEW B, 1983, 28 (12) : 7366 - 7369